JST announces the successful development of a high-quality bulk GaN growth device based on the THVPE method, a development topic of the Newly extended Technology transfer Program (NexTEP). Development ...

Osaka - Gallium nitride (GaN) is a semiconductor material whose wide band gap may one day lead to it superseding silicon in electronics applications. It is therefore important to have GaN ...

In this project, a high-quality and large-diameter GaN wafer is developed to reduce energy and power losses in power devices and LEDs. Specifically, by reducing the crystal defects which affect the ...

As silicon-based semiconductors reach performance limits, gallium nitride is becoming the next go-to material for several technologies. Holding GaN back, however, is its high numbers of defects.

Gallium nitride has become the de facto material in third-generation semiconductors. However, making GaN epi wafers in the quality you need and the thermal resistance you desire are challenges that ...